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 Tokyo, Japan – Scientists from the Institute of Industrial Science at The University of Tokyo fabricated three-dimensional vertically formed field-effect transistors to produce high-density data storage devices by ferroelectric gate insulator and atomic-layer-deposited oxide semiconductor channel. Furthermore, by using antiferroelectric instead of ferroelectric, they found that only a tiny net charge was required to erase data, which leads to more efficient write operations. This work may allow for new even smaller and more eco-friendly data-storage memory. While consumer flash drives already boast huge improvements in size, capacity, and affordability over previous computer media formats in terms of storing data, new machine learning and Big Data applications continue to drive demand for innovation. In addition, mobile cloud-enabled devices and future Internet of Things nodes will require memory that is energy-efficient and small in size. However, current flash memory technologies re